| PART |
Description |
Maker |
| SF3B41 S2008R12V S2008N12V S2008K12V S2008W12V S20 |
200 V, 6 A sensitive triac
200 V, 16 A alternistor triac
800 V, 6 A triac
200 V, 8 A alternistor triac
400 V, 25 A triac
400 V, 10 A triac
Thyristor Product Catalog
Cross Reference Data to Teccor Part Numbers (See datasheet appendix)
600 V, 10 A triac
200 V, 10 A alternistor triac
800 V, 4 A triac
400 V, 16 A alternistor triac
|
Teccor Electronics, Inc.
|
| 604B 1002A 1502A 602BI 1502BI |
TRIAC|400V V(DRM)|6A I(T)RMS|TO-218VAR
TRIAC|400V V(DRM)|15A I(T)RMS|TO-218VAR
SOT23, Low-Power µP Supervisory Circuits with Battery Backup and Chip-Enable Gating
TRIAC|400V V(DRM)|10A I(T)RMS|TO-218VAR 可控硅| 400V五（DRM）的| 10A条口（T）的有效值|18VAR
|
Rochester Electronics, LLC
|
| BCR1AM-12A BCR1AM-12A-A6 BCR1AM-12A-TB |
Triac Low Power Use
|
Renesas Electronics Corporation
|
| BCR3AS-12B BCR3AS-12B-T13 |
Triac Low Power Use
|
Renesas Electronics Corporation
|
| BCR3AS-12A-15 |
Triac Low Power Use
|
Renesas Electronics Corporation
|
| BCR1AM-12A10 |
Triac Low Power Use
|
Renesas Electronics Corporation
|
| BCR3LM-12RBB00 BCR3LM-12RB-15 |
600V - 3A - Triac Low Power Use
|
Renesas Electronics Corporation
|
| BCR12PM-14LA-A8 BCR12PM-14LA-15 |
700 V, 12 A, TRIAC, TO-220AB TO-220F, 3 PIN
Triac Medium Power Use
|
Vishay Intertechnology, Inc.
Renesas Electronics Corporation
|
| BCR1AM-8 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE PLANAR PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| BCR3AS-12B-15 |
Triac Low Power Use(The product guaranteed maximum junction temperature of 150°C)
|
Renesas Electronics Corporation
|
| CQ202-4M CQ202-4N CQ202-4D CQ202-4B |
TRIAC|200V V(DRM)|4A I(T)RMS|TO-202 可控硅| 200伏五（DRM）的| 4A条口T）的有效值|02
TRIAC|400V V(DRM)|4A I(T)RMS|TO-202
From old datasheet system
4.0 AMP TRIAC 600 THRU 800 VOLTS
Leaded Thyristor TRIAC
|
Unisonic Technologies Co., Ltd.
Central Semiconductor Corp.
|
